International Conference on Simulation of Semiconductor Processes and Devices 2016
International Conference on Simulation of Semiconductor Processes and Devices 2016

SISPAD 2016 Best Paper Award and Best Poster Award

Best Paper Award

P. Lenarczyk, M. Luisier: "Physical Modeling of Ferroelectric Field-Effect Transistors in the Negative Capacitance Regime"   Download

The SISPAD 2016 Best Paper Award was presented at the SISPAD 2017 in Kamakura, Japan.
 

2nd rank: W.G. Vandenberghe, M.V. Fischetti, "Modeling Topological-Insulator Field-Effect Transistors using the Boltzmann Equation"   Download

3rd rank: Z. Stanojevic, M. Karner, O. Baumgartner, HW. Karner, C. Kernstock, H. Demel, F. Mitterbauer, "Phase-Space Solution of the Subband Boltzmann Transport Equation for Nano-Scale TCAD"   Download
 

Best Poster Award

M. Shin, W.J. Jeong, J. Lee, J. Seo: "First Principles Based NEGF Simulations of Si Nanowire FETs"   Download

The SISPAD 2016 Best Poster Award was presented at the SISPAD 2016 conference dinner on September 7, 2016.

© Anette Kradisch / Fraunhofer IISB
Best Poster Award presented by SISPAD 2016 Chairman Jürgen Lorenz to M. Shin (right), W.J. Jeong (left), J. Lee, J. Seo (Korea Advanced Institute of Science and Technology)